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在电子工业中,大规模集成、存储器阵列、混合电路、面键合(倒装片)和梁式引线键合的发展趋向,对成熟的电镀工艺提出了许多新的要求。本文叙述了在这些新型的微电子器件中当前采用的电镀方法。目前,正朝着两个相依方面发展:1.陶瓷上的精细导电图型。2.无线键合或硅片反叩键合。研究在金属化陶瓷衬底上的精细导电引线的一种途径,包括用图型电镀和腐蚀的光致抗蚀技术。叙述了对单层以及高密度双层衬底的要求和方法。对发表过的采用专门资料进行电镀的,用于工业上作为半导体键合的新的互连技术,如反叩和梁式引线系统,以及趋于这两方面的例证作了简要的评述。
In the electronics industry, large-scale integration, memory arrays, hybrid circuits, surface-bonded (flip-chip) and beam wire bonding tend to create many new requirements for sophisticated electroplating processes. This article describes the current plating methods used in these new types of microelectronic devices. Currently, is developing in two dependent areas: 1. Fine conductive patterns on ceramics. 2. Wireless bonding or silicon anti-knock bonding. One approach to studying fine conductive leads on metalized ceramic substrates involves pattern plating and etching with a photoresist technique. The requirements and methods for single-layer and high-density double-layer substrates are described. A brief review was made of published examples of new interconnection technologies for semiconductor bonding, such as flip and beam lead systems, that have been electroplated with specialized material and are tending to be both.