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根据ZnGeP2(ZGP)晶体的生长特性,自行设计组装了三段式独立控温生长炉,优化了温场分布。采用改进的垂直布里奇曼法成功生长出外观完整、无裂纹的ZGP单晶体,尺寸达φ15 mm×35 mm。对晶体进行解理实验和X射线衍射分析,发现ZGP晶体易沿(101)面解理,其回摆峰尖锐无劈裂。对未经退火处理的晶片进行红外透过率测试,在2~12μm波段内红外透过率达45%以上。研究结果表明所设计的温场适合于ZGP单晶生长,生长出的ZGP晶体完整性好、质量较高。
According to the growth characteristics of ZnGeP2 (ZGP) crystal, a three-stage independent temperature-controlled growth furnace was designed and assembled to optimize the temperature field distribution. With the improved vertical Bridgman method, a complete, crack-free ZGP single crystal with a size of φ15 mm × 35 mm has been successfully grown. The crystal cleavage experiment and X-ray diffraction analysis showed that the ZGP crystal is easily cleaved along the (101) plane, and the sharp backspin peak is cleaved without cleavage. The infrared transmittance of the un-annealed wafer was tested, and the infrared transmittance was over 45% in the wavelength range of 2 ~ 12μm. The results show that the designed temperature field is suitable for the growth of ZGP single crystal, the grown ZGP crystal has good integrity and high quality.