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研究了一种新的可用于各种砷化镓器件工艺的砷化镓腐蚀液:H_3PO_4+H_2O_2+H_2O。实验证明,它优于现今常用的三种砷化镓腐蚀液(H_2SO_4+H_2O_2+H_2O;NaOH+H_2O_2+H_2O;Br_2+CH_3OH)。对比了这几种腐蚀液的腐蚀特性及对光刻胶的溶解性。磷酸腐蚀液的腐蚀速度可用公式表示为.以GaAs MESFET为例,说明了磷酸腐蚀液特性的利用。 也研究了另一种新的腐蚀液:CH_3COOH+H_2O_2+H_2O,发现它不够稳定,且腐蚀表面不光亮,只能用于特定场合。
A new kind of gallium arsenide etchant which can be used in various gallium arsenide devices is studied: H_3PO_4 + H_2O_2 + H_2O. Experiments show that it is superior to the three commonly used gallium arsenide etching solution (H_2SO_4 + H_2O_2 + H_2O; NaOH + H_2O_2 + H_2O; Br_2 + CH_3OH). The corrosion properties of these etchants were compared with those of photoresist. The corrosion rate of phosphoric acid etching solution can be expressed as: GaAs MESFET, for example, illustrates the use of phosphoric acid etching solution characteristics. Another new etching solution, CH 3 COOH + H 2 O 2 + H 2 O, was also investigated. It was found to be not stable enough and the corrosion surface was not bright enough to be used only for specific applications.