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用离子加速器的离子束进行物质分析是近十年来发展起来的,它是物质分析中的有效手段,包括背散射(RBS)、质子荧光分析(PIXE)和核反应三种方法。它们各有特点,互相补充,所谓背散射就是能量为1～3MeV的~4He离子束或能量为几百keV的质子束打到靶上,入射离子和靶原子核发生库仑相互作用,部分入射离子发生大角度散射的现象。用金-硅面垒半导体探测器可测得此背散射离子能谱。
The ion analysis of ion beams by ion accelerator has been developed in recent ten years. It is an effective method for material analysis, including backscattering (RBS), proton fluorescence analysis (PIXE) and nuclear reaction. They each have their own characteristics, complement each other, the so-called backscattering is the energy of ~ 3MeV ~ 4He ion beam or a proton beam energy of hundreds of keV hit the target, the incident ion and the target nucleus Coulomb interaction occurs, part of the incident ion occurs Large-angle scattering phenomenon. The backscattered ion energy spectrum can be measured with a gold-silicon surface barrier semiconductor detector.