The metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) has received much attention because of its promise for applications in lo
By combining the basic device equations of MOSFET with the polarization retention characteristics of ferroelectric thin films, a misfit strain and temperatu
Using molecular dynamics simulations, the tensile deformation behavior for two types of sub-10 nm multilayer nanowires (NWs) have been investigated.For the
In this study, we developed a general method to analytically tackle a kind of movable boundary problem from the viewpoint of energy variation.Having grouped