Low temperature coefficient of resistivity and metal-semiconductor transition in Cu3NAgx

• 作 者: N.P.Lu[1]L.Gao[1]L.G.Liao[1]W.B.Zhang[1]T.Y.Yu[1]A.L.Ji[2]
• 机 构: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, 100190 Beijing, China
• 出 处: 中国物理学会2012年秋季学术会议
• 发表日期: 2012年期

The binary compound Cu3N in cubic anti-ReOx structure is an excellent host material that it can be doped by many other noble and transitional metals atoms to fabricate novel optical,electrical and magnetic materials.Nanocrystalline Cu3NAgx compound films were synthesized using reactive magnetron co-sputtering of Cu and Ag metal targets with nitrogen.