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In this paper,a CMOS fabrication technology-based humidity sensor has been designed,manufactured and tested.The sensors use parallel plate capacitor structure,the dielectric materials absorption/desorption water molecules lead to changes in dielectric constant,which led to the parallel plate capacitor value changes to characterization ambient humidity.Established physical model of the device,respectively,simulate the process of lift and lower humidity in steady and dynamic state; the main parameters of the sensor response time did an in-depth study.Have analysis the relationship between response time and device structure; Proposed "dead-response zone".