【摘 要】
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Two-dimensional materials (including graphene, MoS2, etc.) represent a promising class of materials for electronic and photonic devices, benefiting from the
【机 构】
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School of Electronic Science and Engineering, Nanjing University, China
【出 处】
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The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
Two-dimensional materials (including graphene, MoS2, etc.) represent a promising class of materials for electronic and photonic devices, benefiting from their unique properties such as extremely high mobility and ultrathin body. In this talk I will present our works on electronic devices based on 2D atomic and molecular semiconducting crystals. In the first part, we provide direct evidence that sulfur vacancies exist in exfoliated MoS2, introducing localized midgap donor states. At low carrier density, the charge transport in MoS2 is by electron hopping through these localized states, leading to much lower mobility than theoretical expectations and insulating behavior. We develop a facile low-temperature thiol chemistry to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps in MoS2. High mobility larger than 80cm2 V-1 s-1 is achieved in backgated monolayer MoS2 field-effect transistors for the first time. We further develop a theoretical model to quantitatively extract the key microscopic quantities that control the transistor performances.
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