The Design of a 850 GHz TMIC Doubler based on Schottky Diode

• 作 者: YiweiHan;BoZhang;YongFan;
• 机 构: EHF Key Laboratory of Fundamental Science University of Electronic Science and Technology of China C
• 出 处: The 7th UK/Europe-China Workshop on Millimeter Waves and Ter
• 发表日期: 2014年期

　　In this paper,we present the design of a 850GHz doubler.The doubler,which ulitlized terahertz monolithic integrated circuit(TMIC)technology,is fabricated on a 5-um GaAs substrate.The simulation result shows that a output power is achieved 0.8 mW in the range from 820GHz to 865GHz with a constantly 10mW driven power across the band.The peak efficiency is over 10%in 850GHz.