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Three-dimensional characterization by TOF-SIMS depth profiling has becomeroutine with the use of a sputter ion beam to remove multiple layers of atoms ormolecules between chemical imaging cycles.However,there are practicalconsiderations such as differential sputtering,ion beam-induced molecular damage,and void spaces within the sample which limit the use of ion beam sputtering to probespecimens beyond the surface region.An alternative approach is to utilize in situ FIBmilling and sectioning in conjunction with TOF-SIMS chemical imaging… what werefer to as FIB-TOF tomography.