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以富P2‰配比合成的ZnGeP2多晶为原料,用改进的Bridgman法生长出外观完整的单晶体。霍尔效应和I-V曲线表明,生长的ZnGeP2晶体属于p型半导体,电阻率为7.5×106Ω.cm。经定向切割后,得到10mm×10mm×2mm的ZnGeP2晶片,分别置于高纯红磷和ZnGeP2同成分粉末的氛围,在550℃进行退火处理。结果表明,P气氛中退火,晶片红外透过率的提高不明显;而在ZnGeP2粉末包裹氛围中退火,晶片的红外透过率在短波范围内得到了有效提高,在2～10μm波段则提高到近60%左右,说明VZ-n对该条件下生长的ZnGeP2单晶红外透过率影响较大,而V0P的影响较小。
Based on the synthesized ZnGeP2 polycrystal with rich P2 ‰ as raw material, an improved single crystal was grown by the modified Bridgman method. The Hall effect and the I-V curve show that the grown ZnGeP2 crystal belongs to a p-type semiconductor with a resistivity of 7.5 × 10 6 Ω · cm. After directional cutting, ZnGeP2 wafers of 10 mm × 10 mm × 2 mm were obtained and placed in the atmosphere of the same composition powder of high purity red phosphorus and ZnGeP 2, respectively, and annealed at 550 ° C. The results show that there is no obvious improvement in the infrared transmittance of the wafer annealed in P atmosphere. However, in the ZnGeP2 powder coating atmosphere, the infrared transmittance of the wafer is effectively increased in the short wave range and increased in the range of 2 ~ 10μm Nearly 60%, indicating VZ-n on the growth of ZnGeP2 single crystal infrared transmittance greater impact, while the V0P less affected.