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Study of surface passivation on InAs/GaSb superlatice photodetectors with side-wall gate controlled
【机 构】
：
Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,C
【出 处】
：
The 13th International Conference on Mid-Infrared Optoelectr
【发表日期】
：
2016年10期
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Investigation in band structure,gap engineering and transport in semimetallic two-dimensional InAs/G
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