High-Speed Preparation of Highly Oriented Β-Sic Films By Laser Chemical Vapor Deposition

• 作 者: SongZHANG[1]RongTU[1]TakashiGOTO[2]
• 机 构: State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University
• 出 处: The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会)
• 发表日期: 2014年期

　　Highly oriented <111> and <110> β-SiC films were prepared on Si(100)single crystal substrates by laser chemical vapor deposition using a diode laser(wavelength = 808 nm)and HMDS(Si(CH3)3-Si(CH3)3)as a precursor.The effects of laser power(PL),total pressure(Ptot),and deposition temperature(Tdep)on the orientation,microstructure and deposition rate(Rdep)were investigated.The orientation of the β-SiC films changed from <111> to random to <110> with increasing PL and Ptot.