【摘 要】
：
Magnetic semiconductors (MSs) obtained by doping transitional metals into host semiconductors,such as Mn-doped Ⅲ–Ⅴ,Ⅱ–Ⅵ,and group Ⅳ semiconductors,is one
【机 构】
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SchoolofPhysics,NationalKeyLaboratoryofCrystalMaterials,ShandongUniversity,Jinan,Shandong,250100,Peo
论文部分内容阅读
Magnetic semiconductors (MSs) obtained by doping transitional metals into host semiconductors,such as Mn-doped Ⅲ–Ⅴ,Ⅱ–Ⅵ,and group Ⅳ semiconductors,is one of the most promising candidates to realize spintronic devices,where both the charge and spin degrees of freedom can be utilized simultaneously.Among various MSs,Si-based MSs attract special attention due to their matured processing technology,availability of producing high-quality Si in large sizes,relatively low costs and widespread use in modern electronics.In order to make nonmagnetic Si magnetic,a certain concentration of Mn ions is introduced,since it is known that a single Mn atom prefers to occupy a tetrahedral interstitial position of the silicon crystal lattice and forms localized magnetic moments (Mn2+ with the effective magnetic moment ≈3 μB) [1].In the meanwhile,Mn dopants induce free carriers (holes) into the system,which could mediate the long range exchange coupling between localized magnetic moments.
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