Structural and electrical properties of Al2O3/LaAlO3/Al2O3 films deposited using various tunnel oxid

来源 :IUPAC 5th International Symposium on Novel Materials and the | 被引量 : 0次 | 上传用户：cxg1112

【作者】

：

H.J.Kim S.Y.Cha D.J.Choi

【机构】

：

Deparment of Materials Science and Engineering,Yonsei University,Seoul 120749,Korea

【出处】

：

IUPAC 5th International Symposium on Novel Materials and the

【发表日期】

：

2009年12期

【关键词】

：

Flash SONOS LaA1O3 High-k dielectrics MOCVD

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Structural and electrical properties of Al2O3/LaAlO3/Al2O3 films deposited using various tunnel oxid

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