采用高效、低成本的紫外压印技术(UV-IL)在2 in.Si/Si O2基Ti/Ti N/Si2Sb2Te5(SST)多层膜表面制备了密度为3.8 M/In2的AMONIL点阵......

In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a ......