Effects of N Doping on the Crystallization of GeSb4Te7 Thin Films for PCRAM Application

来源 :IUPAC 5th International Symposium on Novel Materials and the | 被引量 : 0次 | 上传用户：jjjjedu

【作者】

：

Hyung Keun Kim Nam Hee Kim Jin Hyock Kim Jae Sung Roh Doo Jin Choi

【机构】

：

Deparment of Material Science and Engineering,Yonsei University,Seoul,Korea

【出处】

：

IUPAC 5th International Symposium on Novel Materials and the

【发表日期】

：

2009年12期

【关键词】

：

Phase Change Memory PCRAM N doping

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Effects of N Doping on the Crystallization of GeSb4Te7 Thin Films for PCRAM Application

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