In situ tuning biexciton antibinding-binding transition and fine structure splitting through hydrost

• 作 者: Xuefei Wu Hai Wei Xiuming Dou Kun Ding Ying Yu Haiqiao Ni Zhichuan Niu Desheng Jiang Guangcan Guo Lixin He Baoquan Sun
• 机 构: StateKeyLaboratoryforSuperlatticesandMicrostructures,InstituteofSemiconductors,ChineseAcademyofScien
• 出 处: 第十七届全国凝聚态光学性质会议
• 发表日期: 2014年7期

The investigated (In,Ga)As/GaAs quantum dot (QD) samples with low QD density were grown using molecular beam epitaxy (MBE) on a semi-insulating GaAs substrate.Six typical QDs (QD1-QD6) were chosen for demonstrating the pressure-induced change of the QD exciton (X) and biexciton (XX) transitions and fine structure splitting (FSS).To tune the X and XX transition energies and FSS by pressure at low temperature, an electrically driven diamond anvil cell (DAC) was developed by combining the well-known DAC with a piezoelectric actuator.