Band-gap Tuning in Monolayer and Bilayer MoS2 through Hydrostatic Pressure to Identify Electronic Ba

• 作 者: Xiuming Dou Kun Ding Desheng Jiang Baoquan Sun
• 机 构: StateKeyLaboratoryofSuperlatticesandMicrostructures,InstituteofSemiconductors,ChineseAcademyofScienc
• 出 处: 第十七届全国凝聚态光学性质会议
• 发表日期: 2014年7期

Few-layer molybdenum disulfide (MoS2) is attractive for applications in next-generation electronic and optoelectronic devices.For monolayer MoS2, it is established that both conduction band minimum (CBM) and valence band maximum (VBM) are at K point in Brillouin zone.For bilayer MoS2, it is known that VBM is at Γ point.However, whether K or Λ valley forms the CBM and how is the energy difference between them are still disputable.