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we demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory.The dangling bonds of tin-doped silicon oxide (Sn∶SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses.The current conduction mechanism of low resistance state in post-treated Sn∶SiOx thin film was transferred to hopping conduction from Ohmic conduction.Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction.The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn∶SiOx thin film through supercritical fluid treatment.Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn∶SiOx thin film with supercritical CO2 fluid treatment.