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Resistive Switching Memories based on Al2O3/HfO2 Functional Stack with Controlled SET and RESET Volt
【机 构】
：
ASIC & System State Key Lab,School of Microelectronics,Fudan University,Shanghai 200433,China
【出 处】
：
第一届国际ALD应用大会暨第二届中国ALD学术交流会
【发表日期】
：
2012年4期
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