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Recently, self-powered devices based on a p-n heterojunction were frequently reported, but there were few report about self-powered UV detectors based on single ZnO microwire/p-Si double heterojunctions.Compared to the common p-n junction type device with an n-type ZnO microwire/p-Si heterostructure, the newly designed device with double heterojunctions based on a single n-type ZnO microwire and a p-type Si film displaysed interesting electrical characteristics such as a high rectification ratio and a low turn-on voltage.Under zero bias, the fabricated device had a high photosensitivity of~3.17*103 under UV illumination and a fast response time less than 0.lms,which was shorter than that of the device at forward bias (less than 0.2ms).