【摘 要】
：
For phase-change memory beyond the 30 nm design rule, memory cell structure which stores the data by changing the high resistance and low resistance of Ge2Sb2Tes(GST) need more and more higher the che
【机 构】
：
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and I
【出 处】
：
International Conference on Nanoscience & Technology,China 2
论文部分内容阅读
For phase-change memory beyond the 30 nm design rule, memory cell structure which stores the data by changing the high resistance and low resistance of Ge2Sb2Tes(GST) need more and more higher the chemical mechanical planarization (CMP) performing at a high polishing rate, reasonable selectivity, no corrosion-induced pits and stain.In consideration of the process requirements,we develop a new slurry A which has high GST removal rate (RR) and reasonable selectivity.In addition, slurry A has no stain, no corrosion and has high quality CMP performance.
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