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Amorphous indium gallium zinc oxide (a-IGZO) TFT is a promising candidate for the switching device in display applications.
Transient Response and Stability of a-InGaZnO Thin Film Transistor under Pulsed Gate Bias
【摘 要】
：
Amorphous indium gallium zinc oxide (a-IGZO) TFT is a promising candidate for the switching device in display applications.
【机 构】
：
School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University,Goyan
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
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