Molecular Beam Epitaxial Growth of Spintronic Materials

• 作 者: M.Pendharkar[1]S.J.Patel[2]A.McFadden[2]T.Peterson[3]G.Stecklein[3]K.D.Christie[3]C.Geppert[3]C.Liu[3]A.Rath[4]C.Sivakumar[5]P.Voyles[1]W.Butler[5]P.A.Crowell[3]C.J.Palmstrφm[6]
• 机 构: Electrical and Computer Eng.,Univ.of California,Santa Barbara,CA 93106,USA
• 出 处: 2015 Shanghai Thin Film Conference(2015上海薄膜国际会议)
• 发表日期: 2015年期

　　The spin dependent transport across ferromagnet/semiconductor interfaces depends critically on their structure and electronic properties.Interracial reactions,the formation of non-magnetic interlayers,and conductivity mismatch have been attributed to low spin injection efficiency.In the case of Fe3Ga/GaAs(001)interfaces,the interface reconstruction was found to depend on the GaAs(001)surface reconstruction and the Fe3Ga growth conditions.Record high spin accumulation at Co2MnSi Heusler compound/GaAs(001)interfaces in lateral spin transport device structures have been measured.