【摘 要】
：
硅基CMOS晶体管已经取得了巨大的成功,然而它的进一步发展受到了物理极限的限制.磁电逻辑特别是基于磁场的逻辑有望突破CMOS逻辑的发展极限,因此受到关注.目前已提出的基于磁
【机 构】
：
清华大学材料学院,北京100084
论文部分内容阅读
硅基CMOS晶体管已经取得了巨大的成功,然而它的进一步发展受到了物理极限的限制.磁电逻辑特别是基于磁场的逻辑有望突破CMOS逻辑的发展极限,因此受到关注.目前已提出的基于磁场的逻辑采用昂贵的高迁移率半导体InSb[1],难以进一步在技术上实现.我们提出了一种基于硅的二极管辅助几何增强低磁场磁电阻机制[2],它把p-n结的非线性输运特性和洛伦兹力通过几何关联起来,在低磁场下在硅上实现了低磁场巨磁阻(0.15T下磁电阻大于120％),并且在此基础上实现了室温下电流控制的可重构磁电阻逻辑[3],该磁逻辑器件可以在一个器件上实现包括"与"、"或"、"与非" 和"或非"在内的所有四种基本布尔逻辑运算.这种具有独特磁电性能的逻辑结构可望与非挥发磁存储结合,构成"逻辑-存储"集成器件,该器件将具有电流控制的可重构性质、零数据刷新能耗、瞬时启动等优点,为将来制备高性能的新型微处理器开辟了一条新途径.
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