Dielectric Loss Of CaCu3Ti4O12 Thin Film By Polymer Assisted Deposition Through High-Pressure Oxygen

• 作 者: DAYUFENG;
• 机 构: School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technolo
• 出 处: The 5th International Congress on Ceramics, ICC5(第五届国际陶瓷大会)
• 发表日期: 2014年期

　　High dielectric constant CaCu3Ti4O12(CCTO)thin films were epitaxially grown on(001)LaAlO3 substrates by a polymer assisted deposition(PAD)technique under high-pressure of oxygen.The optimized high pressure annealed CCTO films exhibit a low dielectric loss tangent of 0.002 at 10 kHz at room temperature,which decreases by about two-orders-of magnitude compared to that of the samples annealed under atmospheric pressure.Microstructure of the films were analyzed by x-ray diffraction,atomic force microscope,and transmission electron microscopy(TEM).It is shown that the appearance of phase separation of TiO2 after the high pressure annealing may account for the notably decrease of the dielectric loss.