Titanium dioxide (TiO2) has been widely utilized as photo-catalysts and photo-electrodes in various industrial applications due to its ability to generate electron-hole pairs under ultraviolet light i
The organic solar cell (OSC) is expected as the next generation photovoltaic because it has many advantages such as simple process,low cost,flexibility and large area electronic devices.
Thermoelectric(TE) device has attracted great interests as a green technology because of its ability to directly covert thermal energy to electric energy without any harmful substance.
Aluminum doped Zinc Oxide is a transparent conductive oxide and is largely being used as a window layer in CIS/CIGS solar cells.It also finds its applicability in many micro-electronic devices because
To dope tungsten into zinc oxide (ZnO∶W,WZO) and indium oxide (In2O3∶W,IWO) is quite attractive because there is a valence difference of four between W6+ and Zn2+ and three between W6+ and In3+,respec
Hydrogenated microcrystalline silicon (c-Si∶H) films,which are widely employed for thin films silicon tandem solar cells,are commonly deposited by plasma chemical vapor deposition (CVD).
We report on an a-Si∶H/a-SiGe∶H/μc-Si∶H triple-junction p-i-n solar cells deposited on large-area glass substrates.Microcrystalline silicon (μc-Si∶H) bottom cells were deposited with a VHF-PECVD depos
Deposition of hydrogenated amorphous silicon (a-Si∶H) films at a low substrate temperature Ts of 180℃ is important to realize a-Si∶H PIN solar cells of a high efficiency.
Tungsten-doped zinc oxide (ZnO∶W,i.e.WZO) and tungsten-doped indium oxide (In2O3∶W,i.e.IWO) thin films are promising transparent conductive oxide (TCO) layers for thin film solar cells.
Hydrogen was produced by the direct dissociation of water vapor,i.e.,splitting water molecules by the electrons in a water plasma,at low pressure (<10~50 Torr) using a microwave plasma discharge.