Substrate temperature dependence of defect density of cluster-free a-Si:H films deposited using SiH4

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：Wangqiling1116

【摘要】

：

Deposition of hydrogenated amorphous silicon (a-Si∶H) films at a low substrate temperature Ts of 180℃ is important to realize a-Si∶H PIN solar cells of a high efficiency.

【作者】

：

Kosuke Hatozaki Kenta Nakahara Giichiro Uchida Kazunori Koga

【机构】

：

ShirataniGraduate School of Information Science and Electrical Engineering, Kyushu University,744 Mo

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Light induced degradation Multi-hollow discharge plasma CVD Substrate temperatur

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Deposition of hydrogenated amorphous silicon (a-Si∶H) films at a low substrate temperature Ts of 180℃ is important to realize a-Si∶H PIN solar cells of a high efficiency.

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Substrate temperature dependence of defect density of cluster-free a-Si:H films deposited using SiH4

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