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  5. Fabrication and properties of amorphous (ZnO/In2O3):W TCO thin films grown via electron beam deposit

Fabrication and properties of amorphous (ZnO/In2O3):W TCO thin films grown via electron beam deposit

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：wheat
【摘 要】
：
To dope tungsten into zinc oxide (ZnO∶W,WZO) and indium oxide (In2O3∶W,IWO) is quite attractive because there is a valence difference of four between W6+ and Zn2+ and three between W6+ and In3+,respec
【作 者】
：
Wei Qiao Xin-liang Chen 
【机 构】
：
Institute of Photo-electronic Thin Film Devices and Technology & Tianjin Key laboratory of Photo-ele
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Electron beam deposition (ZnO/In2O3):W thin films electrical and optical propert 
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To dope tungsten into zinc oxide (ZnO∶W,WZO) and indium oxide (In2O3∶W,IWO) is quite attractive because there is a valence difference of four between W6+ and Zn2+ and three between W6+ and In3+,respectively,and thus each W atom can contribute more than one electron to the electrical conductivity in ZnO:W and In2O3∶W thin films.
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