【摘 要】
：
Ferromagnetic CoFe2O4 films were epitaxially deposited on different oxide single crystal substrates by laser molecular beam epitaxy (L-MBE).For heteroepitaxial growth of CoFe2O4 on (001)SrTiO3 substra
【机 构】
：
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronics Scien
【出 处】
：
第四届国际表面与界面科学与工程学术会议(The Fourth International Conference on S
论文部分内容阅读
Ferromagnetic CoFe2O4 films were epitaxially deposited on different oxide single crystal substrates by laser molecular beam epitaxy (L-MBE).For heteroepitaxial growth of CoFe2O4 on (001)SrTiO3 substrates,c-oriented island growth mode due to compressive stress was observed.In contrast,atomic smooth CoFe2O4 films with layer-by-layer mode could be grown on (001)MgO substrates with tensile stress.Surface morphology and interfacial structure for two CFO films under different stress states demonstrated significant differences,which were confirmed by AFM and HRTEM investigation.Furthermore,a strong magnetic anisotropy was obtained in the compressive strained CFO film on STO,comparing with the sample on MgO substrates.We also systematically studied the influence of stress modulation on the microstructure and the electrical properties in heteroeptaxially grown BaTiO3(BTO)/CFO/Nb-STO films.It was found that the BTO ferroelectric properties were enhanced with the relaxation of the tensile stress in BTO/CFO/STO heteroepitaxial system with an out-of-plane polarization of36.4μC/cm2 and a small electric coercivity field of 104 kV/cm.Our results indicate that surface structure and interfacial stress in ferroelectric/ferromagnetic heterostructures can significantly affect the microstructure and properties.
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