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p-type ZnO thin films were prepared by thermal oxidation of rf magnetron sputtered Zn3N2∶Al films on glass substrates.The effects of oxidation temperature on the structural,optical and electrical properties of the samples were investigated by X-ray diffraction (XRD),scanning electron microscopy (SEM),optical transmittance,photoluminescence (PL) and Hall effect measurements.XRD analyses revealed that Zn3N2 films entirely transformed into ZnO films after annealing Zr3N2 films in oxygen over 500 ℃ for 2 hours.Hall effect measurements confirmed p-type conduction in ZnO films with a low resistivity of 9.3Ω·cm,a high hole concentration of 7.6×1018 cm-3 and a Hall mobility of 2.3 cm2/Vs.The films exhibited strong excitonic UV emission and weak deep-level emission.These results demonstrate a promising approach to fabricate low resistivity p-type ZnO with high hole concentration.