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用硅烷(S_iH_4)的高频辉光放电制备的无定形硅制作了P—i—n结构视象管靶,在光敏层和涂有透明导电极(SnO_2:Sb)的基片之间有一薄层掺磷的n型无定形硅,它阻挡了空穴的注入,对可见光获得了极好的光谱响应。
The P-i-n structure tube was fabricated from amorphous silicon prepared by high-frequency glow discharge of silane (S_iH_4) with a thin layer of doped layer between the photoactive layer and the substrate coated with transparent conducting electrode (SnO_2: Sb) Phosphorous n-type amorphous silicon, which blocks the injection of holes, achieves excellent spectral response to visible light.