论文部分内容阅读
用X射线衍射方法对液相外延(LPE)技术生长的碲镉汞(MCT)外延薄膜和CdTe衬底进行了观察与分析。研究表明:MCT薄膜中存在着不同程度的应力,主要表现为晶格的扭曲(300″～1200″范围),这种扭曲致使外延膜双晶回摆曲线宽化,宽化值为100″～150″,外延膜的晶格扭曲与CdTe衬底的不完整性有对应关系。研究还表明:LPE的生长条件对外延膜中的晶格扭曲也有较大影响。本文还讨论了CdTe衬底晶格扭曲形成的因素并探究了减少外延膜晶格扭曲的方法。
The growth of MCT epitaxial films and CdTe substrates grown by liquid phase epitaxy (LPE) were observed and analyzed by X - ray diffraction. The results show that there are different degrees of stress in the MCT films, which are mainly caused by the distortion of the lattice (300 “~ 1200”). The twisting results in the widening of the double- 150 ". The lattice distortion of the epitaxial film has a corresponding relationship with the incompleteness of the CdTe substrate. The research also shows that the growth conditions of LPE also have a great influence on the lattice distortion in the epitaxial film. The paper also discusses the factors that lead to the formation of lattice distortions in CdTe substrates and explores ways to reduce the lattice distortions in epitaxial films.