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采用扫描电镜(SEM)、X光电子能谱仪(XPS)、二次离子质谱仪(SIMS)等多种微分析手段对失效器件芯片表面生成物产生原因进行了分析,同时结合器件制备工艺和器件可靠性实验分析了Si3N4钝化层质量与工艺的关系。通过大量分析实验,确定了器件失效的重要原因是Si3N4钝化层存在缺陷而导致器件因表面漏电而失效。实验结果表明,将Si3N4钝化层中SiOx含量控制在10%以下,器件管壳内水分控制在1%以下,器件经过1 000 h电老化后芯片表面无生成物产生。
The reasons for the formation of the failure device chip surface were analyzed by means of various microanalysis methods such as SEM, XPS and SIMS. At the same time, The reliability experiment analyzes the relationship between Si3N4 passivation layer quality and technology. Through a large number of analysis experiments, it is determined that the important reason of the device failure is that the Si3N4 passivation layer has defects and the device fails due to surface leakage. The experimental results show that the SiOx content in the Si3N4 passivation layer is controlled below 10% and the water in the device package is controlled below 1%. After the device is aged for 1000 hours, no artifacts are generated on the chip surface.