商用SRAM器件单粒子翻转敏感性的“最坏”供电电压(英文)

• 作 者: 张战刚 Liu Jie Hou Mingdong Sun Youmei Gu Song Liu Tianqi Tong Teng Wang Xiaohui Su Hong Yao Huijun Luo Jie Geng Chao Xi Kai
• 出 处: IMP & HIRFL Annual Report
• 发表日期: 2012年00期
• 关键词: 单粒子 供电电压 bipolar transistor drain attributed parasitic amplification pointed irr

The single event upset(SEU)sensitivity of digital devices depends on several factors and supply voltage is one of the key parameters which can affect the inner electrical field and also critical charge.In 1992,L.R.Hite[1]reported increased SEU sensitivity of SOI SRAM with higher voltage,which is attributed to the amplification of primary collected charge by the parasitic bipolar transistor.More recently,F.El-Mamouni[2]pointed out that higher drain bias increases

The single event upset (SEU) sensitivity of digital devices depends on several factors and supply voltage is one of the key parameters which can affect the inner electrical field and also critical charge. In 1992, LRHite [1] reported increased SEU sensitivity of SOI SRAM with higher voltage, which is attributed to the amplification of primary collected charge by the parasitic bipolar transistor. More recently, F. El-Mamouni [2] pointed out that higher drain bias increases