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我们已经开发了应用于InAlAs/InGaAs异质结构的大面积光化学选择性干法腐蚀.其中,使用CH_3Br气体和一个低压汞灯.InGaAs层的腐蚀速率是17nm/min,而InGaAs对InAlAs的腐蚀比大约是25∶1,用于N-InAlAs/InGaAs HEMT’S的干法凹槽是在3英寸表面使用光化学腐蚀形成的.当阈值电压是-0.95V时,整个表面的阈值电压标准偏差是18mv,对1.1μm长的栅可得到456ms/mm的跨导,而其标准偏差为14.9ms/mm。
We have developed large-area photochemical selective dry etching for InAlAs / InGaAs heterostructures using a CH 3 Br gas and a low-pressure mercury lamp.The etching rate of the InGaAs layer is 17 nm / min, and the InGaAs to InAlAs corrosion ratio Is approximately 25: 1, dry grooves for N-InAlAs / InGaAs HEMT’s are formed using photochemical etching on a 3 inch surface and a threshold voltage standard deviation of 18 mV across the entire surface when the threshold voltage is -0.95 V, A 1.1μm long gate yields a 456ms / mm transconductance with a standard deviation of 14.9ms / mm.