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等离子腐蚀和去胶已广泛用于集成电路制作工艺中,它促进了工艺的进步和简化,但却带来了诸如辐射损伤、荷电及沾污等惹人烦恼的问题.人们曾对其带来的碱金属沾污(如Na_■~+、K_■~+),以及RIE反应室带来的重金属沾污(如Fe、Cr、Ni等)有过探讨.最近又有人对去胶过程中的重金属沾污作了进一步研究,提出了直接暴露于等离子体下的正胶,会使硅衬底产生重金属沾污,降低其少数载流子寿命,这种沾
Plasma etching and degumming has been extensively used in integrated circuit fabrication processes that have facilitated process improvements and simplifications but have created annoying problems such as radiation damage, charging, and staining. (Such as Na ~ ■ ~ +, K_ ■ ~ +), and the heavy metal contamination (such as Fe, Cr, Ni etc.) brought by the RIE reaction chamber have been explored. Of heavy metal contamination was further studied, the proposed direct exposure to the plasma under the positive glue, will produce heavy metal contamination of the silicon substrate to reduce the minority carrier lifetime, this dip