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二元过渡金属硫族化合物碲化钼(MoTe_2),由于其室温下合适的禁带宽度和较高的理论迁移率,将作为沟道材料应用于下一代集成电路器件中,而受到普遍的关注。通过碲(Te)和钼(Mo)的原位固相反应,在真空环境中不同温度条件下退火得到1T’-MoTe_2薄膜。利用喇曼光谱、X射线光电子能谱分析以及椭圆偏振光谱化对制备的MoTe_2薄膜进行表征分析,研究了不同退火温度对MoTe_2薄膜质量的影响。实验表明,在450℃退火条件下,薄膜喇曼峰强高,半峰宽较窄,结晶质量良好。但是,由于高温下单质和化合态Te的再蒸发效应,当退火温度从450℃上升到600℃时,薄膜喇曼峰强明显减小且半峰宽变宽,结晶质量显著变差。
The binary transition metal chalcogenide molybdenum (MoTe 2), which has been receiving widespread attention due to its suitable forbidden band width and high theoretical mobility at room temperature, will be used as a channel material in next-generation integrated circuit devices . 1T’-MoTe_2 thin films were obtained by in situ solid-state reaction of tellurium (Te) and molybdenum (Mo) under vacuum at different temperatures. The prepared MoTe_2 thin films were characterized by Raman spectroscopy, X-ray photoelectron spectroscopy and ellipsometry. The effects of annealing temperature on the quality of MoTe_2 thin films were investigated. Experiments show that at 450 ℃ annealing conditions, the film Raman peak intensity, narrow half-width, the crystal quality is good. However, due to the remelting effect of elemental and compound Te at high temperature, the Raman peak intensity and the full width at half maximum of the film decrease significantly when the annealing temperature rises from 450 ℃ to 600 ℃.