Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by

• 作 者: 胡盛东 吴丽娟 周建林 甘平 张波 李肇基
• 机 构: College of Communication Engineering,Chongqing University,State Key Laboratory of Electronic Thin Fi
• 出 处: Chinese Physics B
• 发表日期: 2012年02期
• 关键词: buried breakdown layer insulator implantation epitaxy drain charges accumulated

A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n +-layer silicon-on-insulator (PBN SOI) is proposed in this paper.Based on the proposed expressions of the vertical interface electric field,the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I),resulting in a high breakdown voltage (BV) for the device.For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm),the E I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI,respectively.

A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n + -layer silicon-on-insulator (PBN SOI) is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumulated on the interface between the top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I), resulting in a high breakdown voltage (BV) for the device. For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm), the EI and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with of the conventional SOI, respectively.