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据英国 New Scientist 1992年10月31日报道,一种新的半导体材料——富勒烯半导体材料诞生了。这是日本三菱电气公司的矶田(Satoru Isoda)领导的一个研究小组用 C_(60)制成的。矶田研究小组克服了制造富勒烯晶体结晶度不高的难题。他们利用离子团簇束(ICB)工艺在衬底上形成富勒烯薄膜。电离能提高结晶生长速度,并形成漂亮的晶体。晶体也能被精确排列,这对于赋予半导体以可预测的性质是至关重要的。通过改变电离电压和加速电压,晶体生长的方向也能得以改变。在传统半导体中,被称为施主的其他材料的一些含量被掺入晶
According to the British New Scientist reported on October 31, 1992, a new semiconductor material - fullerene semiconductor material was born. This is a C_ (60) research group led by Satoru Isoda of Mitsubishi Electric Corporation. The allotment team overcomes the problem of low crystallinity in making fullerenes. They formed a fullerene film on a substrate using an ion cluster beam (ICB) process. Ionization can increase the rate of crystal growth and form beautiful crystals. Crystals can also be precisely aligned, which is crucial to give semiconductors predictable properties. By changing the ionization voltage and accelerating voltage, the direction of crystal growth can also be changed. In traditional semiconductors, some of the other materials referred to as donors are doped into the crystal