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SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared (FTIR) spec-troscopy at room temperature (RT) and 10 K. A new peak appears at the wave number of 710 cm-1 and the spectroscopybecomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm-1 peak are inde-pendent of temperature. The relation of the absorption coefficient amax, the band width of half maximum (BWHM) W1/2 ofthe 710 cm-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversionfactor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be deter-mined by FTIR.
SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared (FTIR) spec-troscopy at room temperature (RT) and 10 K. A new peak appears at the wave number of 710 cm-1 and the spectroscopy becomes clearer with an increase in The content of the absorption strength and wave sharp of the 710 cm-1 peak are inde-pendent of temperature. The relation of the absorption coefficient amax, the band width of half maximum (BWHM) W1 / 2 of the 710 cm-1 peak, and the Ge content is determined with the content of the Ge obtained by SEM-EDX. The conversion factor is k = 1.211 at 10 K. Thus, the Ge content in high concentration Ge doped CZ-Si single crystals can deter- mined by FTIR.