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继硅微波晶体管(MWT)独占60年代之后,砷化镓肖特基势垒场效应晶体管(GaAs MESFET)在70年代和80年代出尽了风头,无论是通信、雷达、电子对抗,还是计算机都离不开它。正可谓掀起了一场微波领域的革命! 但是,无论是SiMWT,还是GaAs MESFET,都没有离开“掺杂工程”的概念。器件尺寸的缩小和限制都没有到量子尺寸,也就是说,这些器件仍然属于三维器件,用经典力学可以描述其粒子运动的范畴。随着分子束外延(MBE)和金属有机化合物化学汽相淀积外延(MOCVD)的兴起和发展,半导体
GaAs MESFETs came out of the limelight in the 1970s and 1980s, after being dominated by silicon microwave transistors (MWTs), both in communications, radar, electronic warfare, and computing It can not be separated from it. Is indeed a revolution in the field of microwaves! However, neither SiMWT nor GaAs MESFET, did not leave the concept of “doped engineering.” Device size reduction and limitations are not to the quantum size, that is, these devices are still three-dimensional devices, using classical mechanics can describe the scope of its particle movement. With the rise and development of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), semiconductors