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前言 近年来,随着现代国防和科学技术的发展,对激光材料石榴石晶体和单晶宝石等提出了更严格的要求,其中提高晶体的质量和降低成本是主攻方向。 我国从1965年开始进行YAG石榴石晶体的研制工作,长期来采用半导体单晶硅的制取工艺,即电阻法加热提拉晶体。发热体为石墨,隔热屏用钼片卷接而成,坩埚也用钼片冲压而成。其优点是设备简单,投资少,晶体生长周期短,能耗小。但由于提拉晶体时加热温度高达2200℃,这样对于用钼片卷接
Preface In recent years, with the development of modern national defense and science and technology, more stringent requirements have been put forward on the laser materials such as garnet crystals and single crystal gems, and the improvement of crystal quality and cost reduction are the main directions. China started from 1965 YAG garnet crystal research and development, long-term use of semiconductor monocrystalline silicon preparation process, that is, resistance heating heating crystal. The heating element is graphite, the heat shield is made of molybdenum sheet, the crucible is also made of molybdenum sheet. Its advantages are simple equipment, less investment, short crystal growth cycle, low energy consumption. However, due to pull the crystal when the heating temperature up to 2200 ℃, so for molybdenum film roll