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研究了用硅烷－氢（ＳｉＨ４／Ｈ２）混合气体在铜表面获得的渗硅层的抗氧化性，结果表明，纯铜表面渗硅层的形成提高了材料的抗高温氧化性能。本文对渗硅层的氧化机理进行了探讨。
The oxidation resistance of the siliconized layer obtained on the copper surface by the silane-hydrogen (SiH4 / H2) mixed gas was studied. The results show that the formation of the siliconized layer on the copper surface improves the high temperature oxidation resistance of the material. In this paper, the oxidation mechanism of the silicon layer is discussed.