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阻变型电存储依靠外加电场作用下存储介质的导电性高低差异,即电学双稳态或多稳态来实现数据存取,并具有高容量、高柔韧性、低成本、低能耗、可规模化等优点,为下一代高密度存储技术提供新前景.除了无机氧化物、碳纳米材料、有机小分子和有机聚合物半导体材料之外,近年来,过渡金属配合物在阻变型电存储方面的应用也引起广泛关注.本文对迄今为止报道的大部分基于过渡金属配合物的阻变存储材料进行了总结和讨论,主要包括第VⅢ族金属[包括Fe(Ⅱ)、Ru(Ⅱ)、Co(Ⅲ)、Rh(Ⅲ)、Ir(Ⅲ)、Pt(Ⅱ)等配合物]、第IB族和ⅡB族金属[Cu(Ⅱ)、Au(Ⅲ)、Zn(Ⅱ)等配合物]和镧系过渡金属配合物[Eu(Ⅲ)及其它],并对各种配合物的存储行为和存储机理进行了探讨.过渡金属配合物具有清晰可逆的氧化还原过程,通过改变配体的结构和金属的种类可以很方便地调节材料的前线轨道能级和能隙,利于形成电学双稳态或多稳态,达到二进制或多进制存储的目的,具有潜在应用价值.
Resistance variable electrical storage rely on the external electric field storage medium conductivity differences, that is, electrical bistable or multi-stable to achieve data access, and has high capacity, high flexibility, low cost, low power consumption, scalable And other advantages for the next generation of high-density storage technology to provide new prospects.In addition to inorganic oxides, carbon nano-materials, organic small molecules and organic polymer semiconductor materials, in recent years, the transition metal complexes in resistive variable electrical storage applications But also attracted a great deal of attention.In this paper, most of the resistive memory materials based on transition metal complexes reported so far are summarized and discussed, mainly including Group V metals [including Fe (Ⅱ), Ru (Ⅱ), Co (Ⅲ ), Rh (Ⅲ), Ir (Ⅲ), Pt (Ⅱ) and other complexes], Group IB and Group IIB metals such as Cu (Ⅱ), Au (Ⅲ) and Zn (Ⅱ) Transition metal complexes [Eu (Ⅲ) and others], and discussed the storage behavior and storage mechanism of various complexes.The transition metal complexes have a clear and reversible redox process by changing the structure of the ligand and the metal The types make it easy to adjust the material’s front rail Road energy level and energy gap, conducive to the formation of electrical bistable or multi-stable state, to achieve the purpose of binary or multi-band storage, has potential applications.