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本文发展了一种使用两步边缘场电泳制备碳纳米管薄膜晶体管的方法.利用该方法可以在晶体管的源电极和漏电极处分别得到高密度且有取向排列的碳纳米管阵列.通过控制源漏电极间距可以使这两个碳纳米管阵列在晶体管的沟道中交汇,形成级联结构的导电通路.这种级联结构不仅能有效地降低晶体管沟道中金属性碳纳米管形成导电通路的概率,而且大大减少了每条导电通路中的碳纳米管交叉结的数量,有利于提高器件的性能.利用该方案制备的短沟道(1~2.5μm)碳纳米管薄膜晶体管的电流开关比高达107,输出电流密度达8.5μA/μm.该碳纳米管薄膜的组装方法位置可控、制备效率及成品率高,且可以扩展到大尺寸的基片上,能够极大地提高碳管薄膜晶体管的生产效率.
In this paper, we develop a method for preparing carbon nanotube thin film transistors using two-step fringe field electrophoresis, which can obtain high density and aligned carbon nanotube arrays at the source and drain of the transistor respectively. The distance between the drain electrodes can make the two carbon nanotube arrays meet in the channel of the transistor to form the conductive path of the cascade structure, which not only can effectively reduce the probability of forming the conductive path of the metallic carbon nanotubes in the channel of the transistor , But also greatly reduce the number of cross-links of carbon nanotubes in each conductive path, which is beneficial to improve the performance of the device.Current-switching ratio of short channel (1 ~ 2.5μm) carbon nanotube thin film transistors prepared by this method is up to 107, the output current density of 8.5μA / μm. The carbon nanotube film assembly method position control, preparation efficiency and high yield, and can be extended to large-size substrate, can greatly improve the production of carbon nanotube thin film transistor effectiveness.