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本文研究了由液相外延技术生长的GaAIAs/GaAs双异质结材料制成的发光管,有源层掺杂剂对器件特性的影响结果表明,器件结构和器件制作工艺相同的GaAIAs/GaAs发光管,有源层掺Si可获得较大的光输出功率,而频响特性<15MHz,波长在8700A以上;对有源层掺Ge器件,光输出功率低于掺Si器件,而频响特性则>15MHz,波长可控制在8200A～8500A.深能级测量表明二者有不同的深能级位置,对掺Si(氧沾污)器件,Ec—ET≈0.29eV,而掺Ge器件ET—Ev≈0.42eV.两种掺杂剂对有源层暗缺陷的影响尚无明显区别。
The effects of active layer dopants on device characteristics of GaAsAs / GaAs double heterostructure materials grown by liquid-phase epitaxy have been studied. The results show that the device structures and device fabrication processes have the same GaAIAs / GaAs luminescence Tube, the active layer doped Si can obtain a larger optical output power, and the frequency response of <15MHz, the wavelength of 8700A or more; for the active layer doped Ge device, the optical output power is lower than the Si-doped device, and frequency response characteristics > 15MHz, the wavelength can be controlled at 8200A ~ 8500A. The deep level measurement shows that the two have different deep level positions. For Si-doped devices, Ec-ET≈0.29eV, ≈ 0.42 eV. The effect of the two dopants on the active layer dark defects is not significantly different.