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利用射频磁控溅射方法,在n型(100)Si(0.008~0.02Ω.m)基底上沉积了氮化硼(BN)薄膜.红外光谱分析表明,BN薄膜结构均为六角BN(h-BN)相.在超高真空系统中测量了BN薄膜的场发射特性,发现BN薄膜的场发射特性与基底偏压关系很大,阈值电场随基底偏压的增加先增加后减小.基底偏压为-140V时BN薄膜样品场发射特性要好于其他样品,阈值电场低于8V/μm.F~N曲线表明,在外加电场的作用下,电子隧穿BN薄膜表面势垒发射到真空.
Boron nitride (BN) thin films were deposited on n-type (100) Si (0.008 ~ 0.02Ω.m) substrates by RF magnetron sputtering.The infrared spectra showed that the BN films were hexagonal BN (h- BN) .The field emission characteristics of BN thin films were measured in an ultra-high vacuum system.The field emission characteristics of BN films were found to be strongly related to the substrate bias voltage.The threshold electric field firstly increased and then decreased with the increase of the substrate bias voltage The emission characteristics of the BN thin film at -140V are better than those of the other samples, and the threshold electric field is lower than 8V / μm. The F ~ N curve shows that the potential barrier of electron tunneling BN film is evacuated under the applied electric field.