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针对卫星轨道上的空间环境辐射引起电子元器件参数退化问题,为了研究光电器件空间辐射效应、损伤机理以及参数退化规律,对某国产埋沟科学级电荷耦合器件(charge-coupled devices,CCD)进行了10 Me V质子辐照试验、退火试验及辐射效应理论模型研究.试验过程中重点考察了器件的暗信号和电荷转移效率特性的变化.试验结果表明,器件的主要性能参数随着质子辐照注量的增大明显退化,在退火过程中这些参数均有不同程度的恢复.通过对CCD敏感参数退化规律及其与器件工艺、结构的相关性进行分析,并根据半导体器件辐射效应理论,推导了器件敏感参数随质子辐照注量变化的理论模型,得到了暗信号及电荷转移效率随辐照注量退化的半经验公式.上述工作可为深入开展CCD抗辐射性能预测、抗辐射工艺改进与结构优化提供重要参考.
In order to study the degradation of electronic components caused by space environment radiation on satellite orbit, in order to study the space radiation effect, damage mechanism and parameter degradation of photoelectric devices, a CCD-CCD (Charge-Coupled Devices) The 10 Me V proton irradiation test, the annealing test and the theoretical model of radiation effect were studied.The changes of the dark signal and the charge transfer efficiency of the device were investigated emphatically during the experiment.The experimental results show that the main performance parameters of the device change with the proton irradiation The increase of the fluence obviously degrade, and all these parameters have different degrees of recovery in the process of annealing.According to the degeneration rule of CCD sensitive parameters and the correlation with device technology and structure, and according to the radiation effect theory of semiconductor device, A semi-empirical formula for the degradation of dark signal and charge transfer efficiency with respect to the irradiation fluence was obtained for the theoretical model of the change of the sensitive parameters of the device with the change of the fluence of the proton irradiation. The above work can be used to further develop the CCD radiation performance prediction, And structure optimization provides an important reference.